Technical Details

• Series:-
• Package:Tray
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:80A (Tc)
• Rds On (Max) @ Id, Vgs:-

• Vgs(th) (Max) @ Id:4V @ 13.2mA
• Gate Charge (Qg) (Max) @ Vgs:-
• Input Capacitance (Ciss) (Max) @ Vds:800pF @ 10V
• Power - Max:600W
• Operating Temperature:175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module