Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:4 N-Channel (H-Bridge)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):500V
• Current - Continuous Drain (Id) @ 25°C:46A
• Rds On (Max) @ Id, Vgs:90mOhm @ 23A, 10V

• Vgs(th) (Max) @ Id:5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs:123nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:5590pF @ 25V
• Power - Max:357W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:SP4
• Supplier Device Package:SP4