Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:495A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:2.5mOhm @ 200A, 10V
• Vgs(th) (Max) @ Id:4V @ 10mA

• Gate Charge (Qg) (Max) @ Vgs:1360 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:40000 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1250W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Supplier Device Package:SP6
• Package / Case:SP6