Technical Details

• Series:-
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:8A (Ta), 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:12mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:3.8V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4833 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):2.1W (Ta), 500W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220
• Package / Case:TO-220-3