Technical Details

• Series:-
• Package:Tube
• Part Status:Obsolete
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:-
• Rds On (Max) @ Id, Vgs:24mOhm @ 7.7A, 10V

• Vgs(th) (Max) @ Id:3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:630pF @ 15V
• Power - Max:2.3W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:8-DIP (0.300", 7.62mm)
• Supplier Device Package:8-PDIP