Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:15A (Ta), 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V, 20V
• Rds On (Max) @ Id, Vgs:6mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id:3.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 90W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-252, (D-Pak)
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63