Technical Details

• Series:-
• Package:Bag
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):75 V
• Current - Continuous Drain (Id) @ 25°C:100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:6mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:12200 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):1.65W (Ta), 90W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:SMP
• Package / Case:TO-220-3, Short Tab