Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):200 V
• Current - Continuous Drain (Id) @ 25°C:6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id:4.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Through Hole
• Supplier Device Package:TO-251 (MP-3)
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA