Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):75 V
• Current - Continuous Drain (Id) @ 25°C:83A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:8.5mOhm @ 42A, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:8500 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1.5W (Ta), 125W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220AB
• Package / Case:TO-220-3