Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):80 V
• Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:4Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id:3.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):20V
• Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:M-A1
• Package / Case:3-SIP